IR Expands Portfolio of 650V Devices for Solar, UPS Applications
Ranging from 15A to 90A, the IRGP47xx family of IGBTs utilizes trench thin-wafer technology to reduce conduction and switching losses to deliver increased system efficiency. Available as discrete devices or co-packaged with a soft recovery low Qrr diode, the new IGBTs are optimized for ultra-fast switching (8KHz-30KHz), offering an increased short circuit rating of 6µs, and positive VCE(ON) temperature coefficient for easy paralleling. The higher breakdown voltage provides extra reliability during extreme weather variations and AC-line instability, and eliminates the requirement for voltage suppression devices.
Suitable for a wide range of switching frequencies, the IRGP47xx family features low VCE(ON) of 1.7V (typical) at 100°C and low total switching energy (ETS) to reduce power dissipation. Offered as packaged devices, other key features include maximum junction temperature of 175°C and low EMI for improved reliability.
