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UMS GaN HEMT Process Qualified For Space

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0.25μm process is now part of the European Preferred Part list supported by the European Space agency

United Monolithic Semiconductors (UMS), a European specialist focused on RF, microwave and millimetre wave devices, has announced that its GH25-10 MMIC GaN HEMT technology has been successfully space evaluated. It is now part of the European Preferred Part list (EPPL) supported by the European Space agency (ESA).

This GaN 0.25μm HEMT process is optimised for high power applications up to 20GHz. It also provides a good HEMT noise performance also enabling LNA design.

The MMIC process includes, precision TaN resistors, high value TiWSi resistors, MIM capacitors, inductors, air-bridges, via-holes through the substrate and two metal layers for interconnection.

The reliability study and evaluation of the technology have been supported by ESA, CNES and French MoD (DGA).

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